收藏本站
LHF32KZM
6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS (1)
V CC =2.7V-3.6V, T A =-40°C to +85°C
Versions (4)
LH28F320S3H-L140
37
Sym.
Parameter
Notes
Min.
Max.
Unit
t AVAV
t AVQV
Read Cycle Time
Address to Output Delay
140
140
ns
ns
t ELQV
t PHQV
t GLQV
t ELQX
t EHQZ
t GLQX
t GHQZ
t OH
t FLQV
t FHQV
t FLQZ
t ELFL
t ELFH
CE# to Output Delay
RP# High to Output Delay
OE# to Output Delay
CE# to Output in Low Z
CE# High to Output in High Z
OE# to Output in Low Z
OE# High to Output in High Z
Output Hold from Address, CE# or OE# Change,
Whichever Occurs First
BYTE# to Output Delay
BYTE# to Output in High Z
CE# Low to BYTE# High or Low
2
2
3
3
3
3
3
3
3
3
0
0
0
140
600
50
50
20
140
30
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE:
See 3.3V V CC Read-Only Operations for notes 1 through 4.
V CC =3.3V±0.3V, T A =-40°C to +85°C
Versions (4)
LH28F320S3H-L110
Sym.
Parameter
Notes
Min.
Max.
Unit
t AVAV
t AVQV
Read Cycle Time
Address to Output Delay
110
110
ns
ns
t ELQV
t PHQV
t GLQV
t ELQX
t EHQZ
t GLQX
t GHQZ
t OH
t FLQV
t FHQV
t FLQZ
t ELFL
t ELFH
CE# to Output Delay
RP# High to Output Delay
OE# to Output Delay
CE# to Output in Low Z
CE# High to Output in High Z
OE# to Output in Low Z
OE# High to Output in High Z
Output Hold from Address, CE# or OE# Change,
Whichever Occurs First
BYTE# to Output Delay
BYTE# to Output in High Z
CE# Low to BYTE# High or Low
2
2
3
3
3
3
3
3
3
3
0
0
0
110
600
45
50
20
110
30
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. OE# may be delayed up to t ELQV -t GLQV after the falling edge of CE# without impact on t ELQV .
3. Sampled, not 100% tested.
4. See Ordering Information for device speeds (valid operational combinations).
Rev. 1.6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
LH28F320SKTD-ZR IC FLASH 32MBIT 70NS 48TSOP
LHF00L28 IC FLASH 16MBIT 70NS 48TSOP
LPM409 CHASSIS STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04 POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-6
LT1937ES5#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-5
LT3003EMSE#TRPBF IC LED DRIVER BALLASTER 10-MSOP
LT3465AES6#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-6
相关代理商/技术参数
LH28F320S3-L11 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L110 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L130 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L14 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L140 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L160 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3NS 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:Smart voltage 32Mbit Flash Memory
LH28F320S3NS-L11 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:60 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 线串行 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-PDIP 包装:管件 产品目录页面:1449 (CN2011-ZH PDF)